缺陷 BN 基底诱导二维金属半导体结从肖特基接触到欧姆接触的转变

已完结 10 由哈哈发布于 2024/8/12 12:15:19

DOI:10.1021/acsmaterialslett.4c00357
作者：Chengfeng Pan,&nbsp;Anqi Shi,&nbsp;Wang Gong,&nbsp;Wei Chen,&nbsp;Jing Yan,&nbsp;Xiuyun Zhang,&nbsp;Zhaobo Zhou,&nbsp;Bing Wang*,&nbsp;Yongtao Li* and Xianghong Niu*,&nbsp;
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Abstract：Although Ohmic contact can be formed in two-dimensional (2D) metal–semiconductor junctions (MSJs) due to the weak Fermi level pinning (FLP) effect, it is inconvenient to prepare different 2D

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