Effect of Bias Frequency on Bottom-Up SiO<sub>2</sub> Gap-Filling Using Plasma-Enhanced Atomic Layer Deposition.

已完结 10 由 JJFLY 发布于 2024/8/10 18:17:54

DOI:10.1021/acsami.4c06106
作者：Ye Ji Shin, Ho Gon Kim, Seung Yup Choi, Seo Min Kim, Ji Eun Kang, Hye Won Han, Ji Min Kim, Geun Hwi Kim, Geun Young Yeom
文献类型：期刊论文
补充材料：只需要正文

American Chemical Society (ACS)

Abstract：High-aspect-ratio patterns are required for next-generation three-dimensional (3D) semiconductor devices. However, it is challenging to eliminate voids and seams during gap-filling of these

应助信息

求助已完结，文件已删除 如有需求请重新发布求助一键发布

感谢使用Book学术
本站所有文献仅供个人学习和参考，请勿将文件进行传播。共同遵守网站规定和相关知识产权规定。

上一个求助:其它数据库Naturally Fractured Carbonate Reservoir Characterization: A Case Study of a Mature High-Pour Point Oil Field in Hungary 下一个求助:其它数据库Plastic strain characteristics on frozen silty clay subjected to intermittent vehicle loads