An antiferromagnetic diode effect in even-layered MnBi2Te4

已完结 10 由龙傲天发布于 2024/8/15 14:47:33

DOI:10.1038/s41928-024-01219-8
作者：Anyuan Gao, Shao-Wen Chen, Barun Ghosh, Jian-Xiang Qiu, Yu-Fei Liu, Yugo Onishi, Chaowei Hu, Tiema Qian, Damien Bérubé, Thao Dinh, Houchen Li, Christian Tzschaschel, Seunghyun Park, Tianye Huang, Shang-Wei Lien, Zhe Sun, Sheng-Chin Ho, Bahadur Singh, Kenji Watanabe, Takashi Taniguchi, David C. Bell, Arun Bansil, Hsin Lin, Tay-Rong Chang, Amir Yacoby, Ni Ni, Liang Fu, Qiong Ma, Su-Yang Xu
文献类型：期刊论文
补充材料：只需要正文

Nature

Abstract：In a p–n junction, the separation of positive and negative charges leads to diode transport, in which charge flows in only one direction. Non-centrosymmetric polar conductors are intrinsic d

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