STT-MRAM - Status and Outlook

已完结 10 由 bit5i54 发布于 2024/11/14 9:25:00

DOI:10.1109/TMRC56419.2022.9918607
作者：D. Worledge, C. Safranski, G. Hu, J. Sun, P. Hashemi, S. Brown, L. Buzi, C. D'Emic, M. Gottwald, O. Gunawan, H. Jung, S. Karimeddiny, J. Kim, P. Trouilloud
文献类型：期刊论文
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Institute of Electrical and Electronics Engineers (IEEE)

Abstract：We review the use-case and requirements for Spin-Transfer-Torque MRAM (STT-MRAM) to replace SRAM in last-level-cache. We then describe recent work on double magnetic tunnel junctions and dou

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