Quasi‐atomic layer etching of silicon with surface chlorination and removal using Ar or He plasmas

已完结 10 由居鸭发布于 2024/11/20 17:30:47

DOI:10.1002/ppap.202400016
作者：Namgun Kim, Whan Kyun Kim, Dongjun Shin, Jong Kyu Kim, Chan Min Lee, Kuk Han Yoon, Youngju Ko, Heeyeop Chae
文献类型：期刊论文
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Wiley

Abstract：A comparative study of argon (Ar) and helium (He) plasmas is conducted in quasi‐atomic layer etching (ALE) processes for silicon (Si). The ALE window is identified to be between 35 and 55 V

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