Integration of high-κ native oxides of gallium for two-dimensional transistors

已完结 10 由 Z 发布于 2024/12/1 11:09:36

DOI:10.1038/s41928-024-01286-x
作者：Kongyang Yi, Wen Qin, Yamin Huang, Yao Wu, Shaopeng Feng, Qiyi Fang, Xun Cao, Ya Deng, Chao Zhu, Xilu Zou, Kah-Wee Ang, Taotao Li, Xinran Wang, Jun Lou, Keji Lai, Zhili Hu, Zhuhua Zhang, Yemin Dong, K
文献类型：期刊论文
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Nature

Abstract：The deposition of a metal oxide layer with good dielectric properties is a critical step in fabricating the gate dielectric of transistors based on two-dimensional semiconductors. However, c

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