First-principles investigation of effects of defects on the physical properties of 3C-SiC under high temperatures and pressures

已完结 10 由小马发布于 2024/10/14 16:43:37

DOI:10.1016/j.jmrt.2022.08.017
作者：T. Fan, Wei Liu, Zixiong Ruan, Yuxin Cao, Tuo Ye, Jinzhong Liu, F. Zhong, Xi Tan, H. Liang, Dongchu Chen, Pingying Tang, Yuanzhi Wu
文献类型：期刊论文
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Elsevier

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