Scatterometry-based methodologies for characterization of MRAM technology

已完结 10 由 bit5i54 发布于 2024/10/18 14:29:36

DOI:10.1117/12.2614137
作者：M. Medikonda, D. Schmidt, M. Rizzolo, M. Breton, Ashim Dutta, Heng Wu, E. Evarts, A. Cepler, R. Koret, I. Turovets, Daniel Edelstein
文献类型：期刊论文
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International Society for Optics and Photonics (SPIE)

Abstract：Magnetoresistive random-access memory (MRAM) technology and recent developments in fabrication processes have shown it to be compatible with Si-based complementary metal oxide semiconductor

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