Variability study with CD-SEM metrology for STT-MRAM: correlation analysis between physical dimensions and electrical property of the memory element

待确认 10 由 bit5i54 发布于 2024/10/17 17:18:04

DOI:10.1117/12.2257908
作者：T. Ohashi, A. Yamaguchi, K. Hasumi, O. Inoue, M. Ikota, G. Lorusso, G. Donadio, F. Yasin, Siddharth Rao, G. Kar
文献类型：期刊论文
补充材料：只需要正文

International Society for Optics and Photonics (SPIE)

Abstract：A methodology to evaluate the memory cell property of STT-MRAM (Spin Transfer Torque-Magnetic Random Access Memory) with a CD-SEM (Critical Dimension-Scanning Electron Microscope) was propos

应助信息

等待求助人确认

求助人未确认前，本求助不能再次应助。36小时后系统将自动确认应助成功。本求助将自动关闭。

3小时前

帝企鹅

6648add68c6a11efac2c34735aa3bc31.pdf

4小时前

Book学术机器人

2024/10/17 17:18:05 未找到该文献，机器人已退出，请等待人工下载

2024/10/17 17:18:05 Book学术AI机器人收到请求，开始寻找文献

2024/10/17 17:18:05 已向机器人发送请求

4小时前

bit5i54 发布求助

上一个求助:其它数据库Naturally Fractured Carbonate Reservoir Characterization: A Case Study of a Mature High-Pour Point Oil Field in Hungary 下一个求助:NatureDeep domain adversarial neural network for the deconvolution of cell type mixtures in tissue proteome profiling