Review of STT-MRAM circuit design strategies, and a 40-nm 1T-1MTJ 128Mb STT-MRAM design practice

已完结 10 由 bit5i54 发布于 2024/11/4 15:08:37

DOI:10.1109/TMRC49521.2020.9366711
作者：H. Koike, T. Tanigawa, Toshinari Watanabe, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Yoshiduka, Yitao Ma, H. Honjo, K. Nishioka, S. Miura, H. Inoue, S. Ikeda, T. Endoh
文献类型：期刊论文
补充材料：只需要正文

Institute of Electrical and Electronics Engineers (IEEE)

Abstract：STT-MRAM is now an essential component for future low power consumption electronics. Recently, a number of STT-MRAM developments have been successively disclosed by major LSI vendors [1] –[9

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