Architecture-level energy model for high-capacity STT-MRAM memory

已完结 10 由 bit5i54 发布于 2024/11/4 14:03:06

DOI:10.1080/00207217.2024.2312561
作者：Hui Lin, Ruoxue Yong, Yanfeng Jiang
文献类型：期刊论文
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Taylor & Francis

Abstract：Nowadays, STT-MRAM has emerged as one of the leading contenders for next-generation memory technologies. However, STT-MRAM still exhibits high energy consumption due to its peripheral circui

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