The effect of insertion layer on the perpendicular magnetic anisotropy and its electric-field-induced change at Fe/MgO interface: a first-principles investigation.

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DOI:10.1088/1361-648X/aba721
文献类型：期刊论文
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文献链接：https://doi.org/10.1088/1361-648X/aba721

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Abstract：The development of ultralow power and high density nonvolatile magnetic random access memory stimulates the search for promising materials in magnetic tunnel junction with large voltage-cont

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