The Modulation Effect of LPCVD-SixNy Stoichiometry on 2-DEG Characteristic of UTB AlGaN/GaN Heterostructure

已完结 10 由少年游发布于 2024/4/7 10:47:31

DOI:10.1109/TED.2022.3188609
作者：Liyang Zhu;Qi Zhou;Kuangli Chen;Wei Gao;Yong Cai;Kai Cheng;Zhaoji Li;Bo Zhang
文献类型：期刊论文
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Institute of Electrical and Electronics Engineers (IEEE)

Abstract：In this work, the impact of low-pressure chemical vapor deposition (LPCVD)-Si x N y stoichiometry on 2-D electron gas (2-DEG) transport characteristics of the AlGaN (3.9 nm)/GaN heterostruc

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