Trap States in HfO2/Ga2O3 and Al2O3/Ga2O3 Metal Insulator Semiconductor Structures

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DOI:10.1021/acsaelm.5c00932
作者：Alexander Polyakov, Andrew Miakonkikh, Vladimir Volkov, Eugene Yakimov, Ivan Schemerov, Anton Vasilev, Andrei Romanov, Luiza Alexanyan, Alexei Chernykh, Se
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Abstract：HfO2/(010) bulk Ga2O3 and HfO2/(001) epi layer Ga2O3 metal insulator semiconductor (MIS) structures were prepared by atomic layer deposition of HfO2 at 300 °C with subsequent annealing at 50

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