Study of Strained-SiGe Channel P-MOSFET Using Silvaco TCAD: Impact of Channel Thickness

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DOI:10.4028/p-3a337l
作者：Siti NorFarah Nadia Mohd Salleh, A. F. Abd Rahim, N. S. Mohd Razali, R. Radzali, A. Mahmood, I. H. Hamzah
文献类型：期刊论文
补充材料：只需要正文
文献链接：https://doi.org/10.4028/p-3a337l

Scientific.Net

Abstract：Compressively strained SiGe is an interesting channel material for sub 45 nm p-MOSFETs because of its superior hole mobility (up to 10x over bulk Si channels) and compatibility with current

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