8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer
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由 2809 发布于 2024/1/17 10:41:13
DOI:10.1063/5.0080120
作者：Jielong Liu, Jiejie Zhu, Minhan Mi, Q. Zhu, Siyu Liu, Peng-Fei Wang, Yuwei Zhou, Ziyue Zhao, Jiuding Zhou, Meng Zhang, Mei Wu, Bin Hou, Hong Wang, Ling Yang, Xiao-hua Ma, Y. Hao
文献类型：期刊论文
补充材料：只需要正文
文献链接：https://doi.org/10.1063/5.0080120
作者：Jielong Liu, Jiejie Zhu, Minhan Mi, Q. Zhu, Siyu Liu, Peng-Fei Wang, Yuwei Zhou, Ziyue Zhao, Jiuding Zhou, Meng Zhang, Mei Wu, Bin Hou, Hong Wang, Ling Yang, Xiao-hua Ma, Y. Hao
文献类型：期刊论文
补充材料：只需要正文
文献链接：https://doi.org/10.1063/5.0080120
American Institute of Physics (AIP)
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