Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si3N4 Bilayer Passivation

已完结 10 由 2809 发布于 2024/1/15 16:03:22

DOI:10.1109/TED.2021.3133822
作者：Jielong Liu;Minhan Mi;Jiejie Zhu;Siyu Liu;Pengfei Wang;Yuwei Zhou;Qing Zhu;Mei Wu;Hao Lu;Bin Hou;Hong Wang;Xiaolong Cai;Yu Zhang;Xiangyang Duan;Ling Yang;Xiaohua Ma;Yue Hao
文献类型：期刊论文
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文献链接：https://ieeexplore.ieee.org/document/9660374/

Institute of Electrical and Electronics Engineers (IEEE)

Abstract：AlGaN/GaN high-electron-mobility transistors (HEMTs) with Si-rich SiN/Si 3 N 4 bilayer passivation were studied in this article. The use of a Si-rich SiN interlayer leads to improved channe

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