Normally-off HEMTs With Regrown p-GaN Gate and Low-Pressure Chemical Vapor Deposition SiNx Passivation by Using an AlN Pre-Layer

已完结 10 由昵称昵称发布于 2024/7/22 14:59:04

DOI:10.1109/LED.2019.2928027
作者：Yaozong Zhong;Shuai Su;Xin Chen;Yu Zhou;Junlei He;Hongwei Gao;Xiaoning Zhan;Xiaolu Guo;Jianxun Liu;Qian Sun;Hui Yang
文献类型：期刊论文
补充材料：只需要正文
文献链接：https://doi.org/10.1109/LED.2019.2928027

Institute of Electrical and Electronics Engineers (IEEE)

Abstract：Normally-off HEMTs have been fabricated with regrown p-GaN gate and SiN x passivation by Low-pressure chemical vapor deposition (LPCVD) using an AlN pre-layer, featuring a high-temperature

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