Structure-controlled valley splitting and anomalous valley Hall effect in Janus VSe2/VSeX (X = S, Te) heterojunctions

已完结 10 由芽发布于 2024/5/28 19:28:51

DOI:10.1088/1361-6463/acbcde
作者：C. L. Li, N. B. Wang, G. Hu, X. Yuan, J. Ren, X. Zhao
文献类型：期刊论文
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IOPscience

Abstract：Ferrovalley materials possess spontaneous valley splitting and anomalous valley Hall effect (AVHE) characteristics, making this an ideal platform for valleytronic information devices. The ef

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