NiO junction termination extension for high-voltage (>3 kV) Ga2O3 devices

待确认 10 由李晓儒发布于 2026/5/6 18:34:49

DOI:10.1063/5.0142229
作者：M. Xiao,?Boyan Wang,?Joseph Spencer,?Yuan Qin,?M. Porter,?Yunwei Ma,?Y. Wang,?K. Sasaki,?M. Tadjer,?Yuhao Zhang
文献类型：期刊论文
补充材料：只需要正文

American Institute of Physics (AIP)

Abstract：Edge termination is the enabling building block of power devices to exploit the high breakdown field of wide bandgap (WBG) and ultra-wide bandgap (UWBG) semiconductors. This work presents a

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