Progress report on high aspect ratio patterning for memory devices

已完结 10 由 Jate Wong 发布于 2026/4/12 14:49:47

DOI:10.35848/1347-4065/accbc7
作者：Meihua Shen,?T. Lill,?J. Hoang,?Hao Chi,?Aaron Routzahn,?Jonathan Church,?P. Subramonium,?R. Puthenkovilakam,?Sirish K. Reddy,?Sonal Bhadauriya,?Sloan Roberts,?G. Kamarthy
文献类型：期刊论文
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IOPscience

Abstract：High aspect ratio (HAR) silicon nitride and silicon oxide (ONON) channel hole patterning in 3D NAND flash presents great challenges. This report summarizes some of the recent progress in pat

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