Stress control in thick hydrogenated amorphous carbon films to mitigate stress-induced defects in semiconductor processes

已完结 10 由 blake 发布于 2026/4/15 5:59:36

DOI:10.1016/j.tsf.2025.140635
作者：Myung Mo Ahn , Se Jun Park , Boyoung Shim , Seungmin Moon , Song Yi Baek , Changsoo Lee , Jaehyun Kim , Chulhwan Choi
文献类型：期刊论文
补充材料：只需要正文

Elsevier

Abstract：This study addresses stress-induced defects in hydrogenated amorphous carbon layers (ACL) used as hard masks in Vertical NAND (VNAND) memory fabrication. The addition of N2 gas during ACL de

应助信息

求助已完结，文件已删除 如有需求请重新发布求助一键发布

感谢使用Book学术
本站所有文献仅供个人学习和参考，请勿将文件进行传播。共同遵守网站规定和相关知识产权规定。

上一个求助:其它数据库Naturally Fractured Carbonate Reservoir Characterization: A Case Study of a Mature High-Pour Point Oil Field in Hungary 下一个求助:知网忧郁的背后——来自重组家庭小学生的心理辅导个案