Deep silicon etching and heterogeneous integration for low-loss, low half-wave-voltage, and linear-drive thin-film lithium niobate modulators

待确认 10 由 Ga2O3 发布于 2026/4/14 11:50:40

DOI:10.1016/j.optlastec.2025.114481
文献类型：期刊论文
补充材料：只需要正文
文献链接：https://doi.org/10.1016/j.optlastec.2025.114481

Elsevier

Abstract：Traditional thin-film lithium niobate modulators (TFLNMs), along with silicon photonics (SiP) and indium phosphide (InP) based modulators, face critical bottlenecks such as high coupling los

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