300-nm-thick, ultralow-loss silicon nitride photonic integrated circuits by 8-in. foundry production

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DOI:10.1063/5.0221409
作者：Xuguang Zhang, Yuxin Liang, Yujun Chen, Bitao Shen, Jiahui Huang, Chenghao Lao, Yichen Wu, Zhihui Li, Dapeng Liu, Haowen Shu, Weiwei Hu, Xingjun Wang, Naidi Cui, Lin Chang
文献类型：期刊论文
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American Institute of Physics (AIP)

Abstract：Silicon nitride (Si3N4) photonic integrated circuits are rapidly developing in recent decades. The low loss of Si3N4 attracts significant attention and facilitates a wide range of applicatio

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