铁磁金属和铁磁氧化物的隧道自旋极化及其对隧道磁电阻的影响

G. Suchaneck
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引用次数: 0

摘要

这项工作提出了对半金属铁磁氧化物中自旋极化的碎片数据的检查和统一。它还包括很好理解的铁磁性金属进行比较。评估了自旋极化的温度依赖性和无序依赖性。本文首次基于简化的jullisamre模型计算了隧道磁电阻的温度依赖性和温度系数。居里温度越低,自旋极化的温度依赖性越强,隧道磁阻越差。因此,磁性隧道结(由居里温度略高于室温的铁磁性氧化物组成)在室温下的应用前景并不乐观。此外,居里温度低于650 K的铁磁性氧化物不适合室温应用,因为温度系数超过- 2%是不可接受的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Tunnel Spin-Polarization of Ferromagnetic Metals and Ferrimagnetic Oxides and Its Effect on Tunnel Magnetoresistance
This work presents an examination and unification of fragmented data on spin polarization in half-metallic, ferrimagnetic oxides. It also includes well understood ferromagnetic metals for comparison. The temperature and disorder dependencies of the spin polarization are evaluated. Both the temperature dependence of the tunnel magnetoresistance and, for the very first time, its temperature coefficient are calculated based on the simplified Julliére model. The tunnel magnetoresistance in the magnetic tunnel junctions deteriorates due to the temperature dependence of the spin polarization the lower the Curie temperature is. As a result, magnetic tunnel junctions—consisting of ferromagnetic oxides with a Curie temperature not far above room temperature—are not promising for room temperature applications. Additionally, ferrimagnetic oxides possessing a Curie temperature below 650 K are not suitable for room temperature applications because of an unacceptable temperature coefficient exceeding −2%.
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