光电子器件用大规模二维纳米材料异质外延生长半导体

H. Oh
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引用次数: 0

摘要

半导体纳米结构或薄膜是现代光电器件的重要组成部分,如发光二极管、传感器或晶体管。虽然单晶片被用作异质外延模板,但对灵活性或可转移性的要求越来越高,需要在这种衬底上分离生长的半导体结构,这在技术上具有挑战性且昂贵。最近的研究表明,大规模二维纳米材料可以作为异质外延模板,并提供额外的功能,如转移到外部衬底或机械灵活性。本文综述了在大规模二维纳米材料上异质外延生长的半导体纳米结构或薄膜的生长、结构特性及其在光电器件中的应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Heteroepitaxially grown semiconductors on large-scale 2D nanomaterials for optoelectronics devices
Semiconductor nanostructures or thin films are vital components of modern optoelectronic devices, such as light-emitting diodes, sensors, or transistors. While single crystalline wafers are used as heteroepitaxial templates for them, increasing demands on flexibility or transferability require separation of the grown semiconductor structures on such substrates, which is technically challenging and expensive. Recent research suggests that large-scale 2D nanomaterials can serve as heteroepitaxial templates and provide additional functionalities such as transferability to foreign substrates or mechanical flexibility. In this paper, growth, structural properties, and optoelectronic device applications of semiconductor nanostructures or thin films which are heteroepitaxially grown on large-scale 2D nanomaterials are reviewed.
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