高Sc浓度Al(1−x)ScxN薄膜的溅射沉积技术

2017 China Semiconductor Technology International Conference (CSTIC) Pub Date : 2017-03-01 DOI:10.1109/CSTIC.2017.7919885

B. Heinz, S. Mertin, O. Rattunde, M. Dubois, S. Nicolay, G. Christmann, Maurus Tschirky, P. Muralt

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引用次数: 2

摘要

氮化铝钪(Al1−xScxN)具有强增强的压电响应，是下一代射频滤波器，传感器，致动器和能量收集设备中即将推出的压电材料的选择。本文主要研究了高Sc含量Al1−xScxN薄膜的沉积技术。利用簇型溅射沉积工具在200毫米衬底上生长出Sc浓度接近43 at%的薄膜。讨论了压电响应与沉积参数和薄膜结构特性的关系。将描述提供高Sc浓度的大批量生产溶液所需的步骤。

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Sputter deposition technology for Al(1−x)ScxN films with high Sc concentration

Aluminium scandium nitride (Al1−xScxN) with its strongly enhanced piezoelectric response is the upcoming piezoelectric material of choice in next generation RF filters, sensors, actuators and energy harvesting devices. This paper will concentrate on the deposition technology for Al1−xScxN films with high Sc content. Films with Sc concentrations close to 43 at% have been grown on 200-mm substrates using a cluster type sputter deposition tool. The piezoelectric response will be discussed and correlated with the deposition parameters and film structural properties. The steps required to deliver a high-volume production solution for high Sc concentration will be described.

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2017 China Semiconductor Technology International Conference (CSTIC)

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