硅油中各种杂质的电子亲和能和电离能

N. Tsuchida
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引用次数: 3

摘要

给出了各种杂质的电子亲和力及其电子发射电离能。用薄膜隧道发射极向硅油中注入电子和空穴时,注入电压受杂质种类和杂质量的影响。通过纯硅油的注入电压与被杂质污染的硅油的注入电压之差来计算杂质的电子亲和力。根据被污染硅油的空穴注入电压,计算了杂质电子发射所需的能量。实验结果表明,电子亲和和电子发射能与杂质的结构有关。具有高电子亲和能力或高电子发射能力的杂质具有较大的偶极矩或较多的π电子。各种杂质的电子亲和力和电子发射能量主要与其受体数和给体数相关。>
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The electron affinity and ionization energy of various impurities in silicone oil
Electron affinities of various impurities and their electron emission ionization energies are presented. When electrons and holes were injected into silicone oil with a thin-film tunnel emitter, the injecting voltage was influenced by the type of impurity and its amount. The electron affinity for an impurity was calculated from the difference between the injecting voltage in pure silicone oil and the voltage in silicone oil contaminated with the impurity. The energy which is required for electron emission from the impurity was calculated from the hole injection voltage for the contaminated silicone oil. According to the experimental results, the electron affinity and the energy for electron emission depended on the structure of the impurity. Impurities with high electron affinity or high electron emission capability had either large dipole moments or many pi electrons. Electron affinity of various impurities and the electron emission energy were mainly correlated to their acceptor number and their donor number, respectively. >
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