采用多晶硅栅极的单次全硅化(FUSI)方法制备具有双功功能金属栅极的晶体管

Technical digest. International Electron Devices Meeting Pub Date : 2002-12-08 DOI:10.1109/IEDM.2002.1175854

W. Maszara, Z. Krivokapic, P. King, J. Goo, M. Lin

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引用次数: 72

摘要

通过对多栅极进行单步全硅化，得到了NMOS和PMOS两种不同功函数的金属栅极，分别为/spl sim/4.5 eV和/spl sim/4.9 eV。多晶硅损耗的减少量为/spl sim/0.25 nm。砷在NMOS电介质上的堆积被认为是NiSi功函数改变的原因。对于相同的T/sub / sinv / poly栅极，金属栅极可能提供很少或没有栅极电流降低。

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Transistors with dual work function metal gates by single full silicidation (FUSI) of polysilicon gates

Metal gate electrodes with two different work functions, /spl sim/4.5 and /spl sim/4.9 eV for NMOS and PMOS, respectively, were obtained by single-step full silicidation of poly gates. Reduction of polysilicon depletion was /spl sim/0.25 nm. Pile-up of arsenic at the NMOS dielectric is believed responsible for NiSi work function modification. Metal gate may offer little or no gate current reduction for the same T/sub oxinv/ as poly gate.

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来源期刊

Technical digest. International Electron Devices Meeting

CiteScore

4.50

自引率

0.00%

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