具有聚合物栅极的长寿命多isfet

K. Tsukada, M. Sebata, Y. Miyahara, H. Miyagi
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引用次数: 48

摘要

长寿命,集成多isfet与CMOS接口电路已经开发。接口电路设计用于阻抗转换和每个ISFET信号的快速多路复用。在栅极上形成了钠、钾和氯三种离子选择膜,并由一层有图案的厚聚酰亚胺层隔开。通过选择合适的增塑剂,改善了聚合物膜与ISFET栅极粘附性差的问题。因此,钠、钾和氯化物的化学反应可以持续两个多月。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Long-life multiple-ISFETS with polymeric gates

Long-life, integrated multiple-ISFETs with CMOS interface circuits have been developed. The interface circuits are designed for impedance conversion and rapid multiplexing of the signal from each ISFET. Three kinds of ion-selective membranes for sodium, potassium and chloride are formed on the gates and separated by a patterned thick polyimide layer. The poor adhesion of the polymeric membrane to the ISFET gate is improved by selecting the proper plasticizer for use in the membrane. As a result, a chemical response for sodium, potassium and chloride can be obtained for more than two months.

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