Si-ZSM-5沸石取向晶体的生长模型

J.H. Koegler, H. van Bekkum, J.C. Jansen
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引用次数: 98

摘要

提出了沸石合成混合物中Si-ZSM-5(硅石-1)晶体生长的模型。成核和晶体生长发生在凝胶颗粒和液体的界面,这是硅源和模板都大量存在的唯一地方。在将该模型扩展到在支撑表面上生长时,前驱体凝胶层作为模板分子的锚定位点起着重要作用。取向是由于晶体的交流面在衬底表面的平面上优先生长。碱离子在该表面的存在可能对沸石成核产生不利影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Growth model of oriented crystals of zeolite Si-ZSM-5

A model for the growth of Si-ZSM-5 (silicalite-1) crystals from zeolite synthesis mixtures is proposed. Nucleation and crystal growth occur at the interface of gel particles and liquid, the only place where both the silicon source and template are present in abundance. In the extension of this model to growth on a support surface, a precursor gel layer plays an important role as an anchoring site for the template molecules. Orientation results from the preferential growth of the ac-plane of the crystallites in the plane of the substrate surface. The presence of alkali ions at this surface may adversely affect zeolite nucleation.

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