808 nm激光二极管纵向泵浦tm掺杂GdVO/sub - 4/激光器

2003 Conference on Lasers and Electro-Optics Europe (CLEO/Europe 2003) (IEEE Cat. No.03TH8666) Pub Date : 2003-06-22 DOI:10.1109/CLEOE.2003.1312088

Y. Urata, S. Wada

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引用次数: 1

摘要

本文研究了用CZ技术生长的Tm:GdVO/sub - 4/晶体。我们用808 nm的LD泵浦晶体，获得了12.2%的斜率效率，这是LD泵浦Tm的最大值:GdVO/sub 4/。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Tm-doped GdVO/sub 4/ laser longitudinally pumped by 808 nm laser diode

In this study, a Tm:GdVO/sub 4/ crystal grown by the Czochralski (CZ) technique was investigated. We pumped the crystal with an 808 nm LD and obtained a slope efficiency of 12.2 %, the maximum value reported for LD-pumped Tm:GdVO/sub 4/.

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2003 Conference on Lasers and Electro-Optics Europe (CLEO/Europe 2003) (IEEE Cat. No.03TH8666)

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