Performance Evaluation of Submicron SiC MESFET

The quality of a finished MESFET is assessed by evaluating its DC and AC characteristics, whilst the target characteristics can be achieved by optimizing the device parameters prior to its fabrication. In this research the I - V and R.F characteristics of submicron SiC MESFET are simulated. In order to achieve optimum values of simulated intrinsic parameters, an objective function based on experimental data for both phase and magnitude is defined. The device intrinsic small signal parameters are then evaluated by using the simulated data. By using particle swarm optimization, different gains of the device and insertion loss are also taken into account which helped in formulating a good agreement between simulated and experimental data.