三角形反铁磁体Mn3Sn中异常霍尔效应开关的压力控制三聚化

C. Singh, Vikram Singh, Gyandeep Pradhan, V. Srihari, H. Poswal, R. Nath, A. Nandy, A. Nayak
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引用次数: 5

摘要

本文对三角形反铁磁(AFM)化合物Mn $_3$ Sn中异常霍尔效应(AHE)的压力诱导开关进行了详细的理论和实验研究。我们的理论模型表明,压力驱动平面内Mn键长度的显著分裂$i.e.$是一种有效的三聚化,这反过来通过改变系统中的平面间交换参数来稳定螺旋AFM基态。我们通过实验证明,Mn $_3$ Sn中的AHE在环境压力下从5 $\mu\Omega$ cm减小到约1.5 GPa的施加压力下为零。此外,我们的压力相关磁化研究表明,Mn $_3$ Sn的传统三角形AFM基态系统地转变为螺旋AFM相,其中对称性不支持实现有限AHE所需的不消失的Berry曲率。压力相关的x射线衍射(XRD)研究排除了结构相变在观察到的现象中的任何作用。此外,在环境压力下,当系统进入螺旋AFM相时,温度相关的面内晶格参数偏离单调行为,从而支持三聚化对控制AHE的影响。我们认为,本研究对理解Mn $_3$ Sn及其相关材料中不同磁基态的稳定机制及其在AHE开关中的潜在应用做出了重要贡献。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Pressure controlled trimerization for switching of anomalous Hall effect in triangular antiferromagnet Mn3Sn
Here, we present a detailed theoretical and experimental study on the pressure induced switching of anomalous Hall effect (AHE) in the triangular antiferromagnetic (AFM) compound Mn$_3$Sn. Our theoretical model suggests pressure driven significant splitting of the in-plane Mn bond lengths $i.e.$ an effective trimerization, which in turn stabilizes a helical AFM ground state by modifying the inter-plane exchange parameters in the system. We experimentally demonstrate that the AHE in Mn$_3$Sn reduces from 5$\mu\Omega$ cm at ambient pressure to zero at an applied pressure of about 1.5 GPa. Furthermore, our pressure dependent magnetization study reveals that the conventional triangular AFM ground state of Mn$_3$Sn systematically transforms into the helical AFM phase where the symmetry does not support a non-vanishing Berry curvature required for the realization of a finite AHE. The pressure dependent x-ray diffraction (XRD) study rules out any role of structural phase transition in the observed phenomenon. In addition, the temperature dependent in-plane lattice parameter at ambient pressure is found to deviate from the monotonic behavior when the system enters into the helical AFM phase, thereby, supporting the proposed impact of trimerization in controlling the AHE. We believe that the present study makes an important contribution towards understanding the stabilization mechanism of different magnetic ground states in Mn$_3$Sn and related materials for their potential applications pertaining to AHE switching.
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