W(110)表面Sn的表面结构和温度可逆相变

Dhiman Banik, T. Nakagawa
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引用次数: 0

摘要

利用低能电子衍射分析研究了W(110)表面Sn覆盖层的生长。在W(110)上发现了(1 × 3)和(1 × 4)结构的Sn吸附位点。在(1 × 3)结构形成过程中,锡原子仅吸附在三层中空位点上。然而,在较高的覆盖率下,Sn原子被填满后会吸附在四重空心位点上,形成(1 × 4)结构,形成致密的覆盖层结构。两种结构均为上覆结构,界面处未形成合金。(1 × 3)相在≈270 K以下表现出温度可逆的相变。在低温下,形成了具有长程阶次的相。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Surface Structure and Temperature‐Reversible Phase Transition of Sn on W(110) Surface
The growth of Sn overlayers on the W(110) surface is investigated using low‐energy electron diffraction analysis. The structural investigation reveals Sn adsorption sites on the W(110) for (1 × 3) and (1 × 4) structures. During the formation of the (1 × 3) structure, Sn atoms are only adsorbed on the threefold hollow sites. However, at higher coverages, Sn atoms are adsorbed on the fourfold hollow sites after the threefold hollow sites are filled up to form the (1 × 4) structure, resulting in a dense overlayer structure. Both structures are overlayer with no alloy formation at the interface. The (1 × 3) phase exhibits a temperature‐reversible phase transition below ≈270 K. At low temperatures, a phase with long‐range order is developed.
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