l -谷氨酸掺杂KDP晶体的生长与表征

2013 International Conference on Emerging Trends in VLSI, Embedded System, Nano Electronics and Telecommunication System (ICEVENT) Pub Date : 2013-04-11 DOI:10.1109/ICEVENT.2013.6496594

R. Krishnamurthy, B. S. Samuel, R. Rajasekaran

{"title":"l -谷氨酸掺杂KDP晶体的生长与表征","authors":"R. Krishnamurthy, B. S. Samuel, R. Rajasekaran","doi":"10.1109/ICEVENT.2013.6496594","DOIUrl":null,"url":null,"abstract":"Potassium Dihydrogen Phosphate (KDP) doped with L-glutamic acid has been grown by solvent slow evaporation technique from a mixture of aqueous solution of KDP and 1.0 mol% of L-Glutamic acid at room temperature. The grown crystals were characterized by powder X-ray diffraction and UV-visible. The The Nonlinear optical property (SHG) of L-glutamic acid doped KDP has been confirmed. Microhardness studies were carried out on the grown crystal.","PeriodicalId":6426,"journal":{"name":"2013 International Conference on Emerging Trends in VLSI, Embedded System, Nano Electronics and Telecommunication System (ICEVENT)","volume":"10 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Growth and characterization of KDP crystals doped with L-Glutamic acid\",\"authors\":\"R. Krishnamurthy, B. S. Samuel, R. Rajasekaran\",\"doi\":\"10.1109/ICEVENT.2013.6496594\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Potassium Dihydrogen Phosphate (KDP) doped with L-glutamic acid has been grown by solvent slow evaporation technique from a mixture of aqueous solution of KDP and 1.0 mol% of L-Glutamic acid at room temperature. The grown crystals were characterized by powder X-ray diffraction and UV-visible. The The Nonlinear optical property (SHG) of L-glutamic acid doped KDP has been confirmed. Microhardness studies were carried out on the grown crystal.\",\"PeriodicalId\":6426,\"journal\":{\"name\":\"2013 International Conference on Emerging Trends in VLSI, Embedded System, Nano Electronics and Telecommunication System (ICEVENT)\",\"volume\":\"10 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-04-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 International Conference on Emerging Trends in VLSI, Embedded System, Nano Electronics and Telecommunication System (ICEVENT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEVENT.2013.6496594\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Emerging Trends in VLSI, Embedded System, Nano Electronics and Telecommunication System (ICEVENT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEVENT.2013.6496594","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

以掺杂l -谷氨酸的磷酸二氢钾(KDP)水溶液和1.0 mol%的l -谷氨酸在室温下通过溶剂慢蒸发法制备了掺杂l -谷氨酸的磷酸二氢钾(KDP)。用粉末x射线衍射和紫外可见光谱对生长的晶体进行了表征。证实了l -谷氨酸掺杂KDP的非线性光学性质。对生长晶体进行了显微硬度研究。

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Growth and characterization of KDP crystals doped with L-Glutamic acid

Potassium Dihydrogen Phosphate (KDP) doped with L-glutamic acid has been grown by solvent slow evaporation technique from a mixture of aqueous solution of KDP and 1.0 mol% of L-Glutamic acid at room temperature. The grown crystals were characterized by powder X-ray diffraction and UV-visible. The The Nonlinear optical property (SHG) of L-glutamic acid doped KDP has been confirmed. Microhardness studies were carried out on the grown crystal.

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2013 International Conference on Emerging Trends in VLSI, Embedded System, Nano Electronics and Telecommunication System (ICEVENT)

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