人造gd -ga石榴石的轨迹配准特性

K. Thiel, H. Külzer, W. Herr
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引用次数: 10

摘要

在1.4 ~ 7.4 MeV/amu的能量范围内,用252cf -裂变产物84Kr-、132Xe-和238u离子照射合成了Gd3Ga5O12、Gd3-xCaxGa5-xZrxO12和Gd3Ga5-2xMgxZrxO12的钆镓石榴石晶体,研究了它们的径迹记录特性。发现纯钆镓石榴石对238u离子具有很高的径迹配准阈值,≧0.8 MeV/amu。Ca-、Zr-和mg -取代石榴石的径迹登记效率随晶体平均电子密度的降低而增加。在轨道长度、轨道直径和轨道密度方面,轨道配准没有明显的各向异性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Some track registration properties of artificial Gd-Ga-garnets

Synthetic crystals of gadolinium gallium garnets of the composition Gd3Ga5O12, Gd3-xCaxGa5-xZrxO12, and Gd3Ga5-2xMgxZrxO12 were irradiated with 252Cf-fission products, 84Kr-, 132Xe- and 238U-ions in the energy range of 1.4–7.4 MeV/amu in order to study their track registration properties. Pure gadolinium gallium garnet was found to have a very high track registration threshold of ≧0.8 MeV/amu for 238U-ions. Track registration efficiency of Ca-, Zr-, and Mg-substituted garnets tends to increase with decreasing mean electron density of the crystals. No substantial anisotropy of track registration with respect to track length, track diameter and track density was observed.

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