不同界面层的InAs/GaSb ii型超晶格的建模与仿真

K. Zhou, D. Yi, Ming Li, Liancheng Zhao, Liming Gao
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引用次数: 0

摘要

界面层对InAs/GaSb ii型超晶格的性能影响很大,它不仅可以平衡相邻层之间的应变,还可以改变吸收截止波长和相对吸收强度。本文采用基于包络函数近似的改进k·p方法,从理论上研究了不同中频对俄歇复合、吸收截止波长和相对吸收强度的影响。建模和仿真结果表明,不同的中频可以获得不同的光学特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Modeling and simulation of InAs/GaSb type-II superlattices with different interface layers
Interface (IF) layers have great influence on the performance of InAs/GaSb type-II superlattice, which can not only balance the strain between adjacent layers, but also change the absorption cutoff wavelength and relative absorption strength. In this study, a modified k·p method based on envelope function approximation is used to theoretically investigate different IF influence on Auger recombination, absorption cutoff wavelength and relative absorption strength. The results of modeling and simulation show that different optical properties can be obtained by different IF.
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