C60-WSe2杂化物用于光传感的光激发

K. Jayanand, Silvino P. Bastos, A. Kaul
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引用次数: 0

摘要

过渡金属二硫族化合物(TMDCs)单层由于其独特的二维(2D)层状结构而具有优异的电子和光电子性能,引起了后硅电子和光电子研究人员的兴趣。近年来,人们一直关注于探索与TMDCs的范德华(vdW)异质结,包括与低维材料(如零维(0D)系统)的异质结。将0D-2D组件集成在一起,为光电子和电子应用配置各种材料堆栈提供了机会。在本研究中,我们通过在卤化物辅助低压化学气相沉积(HA-LPCVD)制备的单层WSe2薄片上自旋涂覆C60分子,合成了0D-2D vdW异质结构。拉曼光谱和光致发光光谱使我们能够评估vdW界面上的载流子交换。我们发现,在C60沉积后,WSe2−C60杂化体的光电探测器性能有所提高,并对光照功率的函数进行了研究。我们的研究表明,WSe2−C60混合系统是下一代光传感器件的一个有吸引力的选择。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Photoexcitation of C60-WSe2 hybrids for optical sensing
Monolayers of transition metal dichalcogenides (TMDCs) have caught the interest of post-silicon electronics and optoelectronics researchers due to their exceptional electronic and optoelectronic properties which stem from their unique two-dimensional (2D) layered structure. In recent years, there has been a focus on exploring van der Waals (vdW) heterojunctions with TMDCs, including with lower dimensionality materials such as zero-dimensional (0D) systems. Integrating 0D-2D assemblies together provides an opportunity to configure a diverse array of material stacks towards optoelectronics and electronics applications. In this study, we synthesized 0D-2D vdW heterostructure by spin coating C60 molecules on halide-assisted-low-pressure chemical-vapor-deposition (HA-LPCVD) produced monolayer WSe2 flakes. Raman and photoluminescence spectroscopy allowed us to assess the charge carrier exchange at the vdW interface. We found that after C60 deposition, the photodetector figures of merit for WSe2 − C60 hybrids improved, and investigations were conducted as a function of illumination power. Our studies reveal that WSe2 − C60 hybrid system is an appealing choice for next generation optical sensing devices.
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