衬底温度对超导体异质结构BiPbSrCaCuZnO光谱发射的影响

Suzan M. Shakouli
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引用次数: 0

摘要

本文讨论了外加电压对超导体衬底样品的影响。底物温度(Ts)增加了底物原子的活化能。因此,ZnO半导体中少数载流子(空穴)的注入增加。这些载流子与Cu原子的4S1壳层电子复合。复合有两种方式发生,从波段到波段(直接复合)或通过圈闭(间接复合)。复合机制在紫外和可见光谱中产生光子发射。电压和温度之间的校准使用Variac器件实现。施加电压分别为60、65、70和80伏,记录的衬底温度分别为300、320、350和400°C。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Substrate Temperature Effect on the Spectrum Emission in Superconductor Heterostructure BiPbSrCaCuZnO
This paper shows the applied voltage effect on the superconductor substrate sample. The substrate temperature (Ts) increases the activation energy of the substrate atoms. Thus, the injecting of minority carriers (holes) increased in ZnO semiconductor. These carriers recombine with electrons of 4S1 shell for Cu atom. The recombination occurs by two ways from band to band (direct recombination) or via traps (indirect recombination). The recombination mechanisms produce photons emission in the ultraviolet and visible spectrum. The calibration between voltage and temperature achieved using Variac device. The applied voltages were 60, 65, 70, and 80 Volt, and the recorded substrate temperatures were 300, 320, 350, and 400 °C, respectively.
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