一个YBCO/BST/MgO数字间变容器和一个l波段可调高温超导带通滤波器

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI:10.1109/IMWS-AMP.2015.7324962

Xu Wang, Fengjin Xia, Na Li, Jia Wang, Chunguang Li, Xueqiang Zhang, Y. Bian, Guoqiang Li, Yun Wu, Hong Li, Liang Sun, Yusheng He

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引用次数: 1

摘要

采用脉冲激光沉积(PLD)技术在MgO衬底上生长了YBCO/Ba0.05Sr0.95TiO3 (BST-0.05)异质结构薄膜数字间变容管。在低温下对BST薄膜的微波性能进行了表征。介电常数在1160 ~ 252之间变化78%，损耗正切值在0.01 ~ 0.02之间。提出了一种以半导体变容管为调谐元件的l波段四极可调谐高温超导体(HTS)带通滤波器。当直流偏置电压为0.5 ~ 8v时，滤波器中心频率从1.25 GHz调谐到1.58 GHz，插入损耗为1.7 ~ 1 dB，形状因子为40 dB/3 dB，优于3.7，反射优于-10.4 dB。

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A YBCO/BST/MgO interdigital varactor and an L-band tunable HTS bandpass filter

This paper presented a YBCO/Ba0.05Sr0.95TiO3 (BST-0.05) heterostructure thin film interdigital varactor grown on a MgO substrate by pulsed laser deposition (PLD). The microwave properties of the BST film were characterized at cryogenic temperature. The dielectric constant changed 78 % from 1160 to 252 and loss tangent was in the range of 0.01-0.02. An L-band four pole tunable high temperature superconductor (HTS) bandpass filter with semiconductor varactors as tuning elements was also presented in this paper. For a dc bias voltage of 0.5-8 V, the filter center frequency tuned from 1.25 GHz to 1.58 GHz, with an insertion loss of 1.7-1 dB, a 40 dB/3 dB shape factor better than 3.7, and a reflection better than -10.4 dB.

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来源期刊

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

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