WSe2-Bi2Se3异质结构器件中谷耦合自旋光电流的非局部检测和电调制

Minji Noh, Soonyoung Cha, Jehyun Kim, Jangyup Son, Hyemin Bae, Doeon Lee, Hoil Kim, Jekwan Lee, Hoseung Shin, Sangwan Sim, Seunghoon Yang, Sooun Lee, Gangtae Jin, M. Jo, W. Shim, Chul-Ho Lee, J. S. Kim, Dohun Kim, Hyunyong Choi
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引用次数: 0

摘要

我们进行了非局部圆形光电测量,并直接从WSe2到Bi2Se3拓扑绝缘体产生了谷耦合自旋极化电子。我们的WSe2-Bi2Se3异质结构为实现电控谷自旋自由度提供了一个新的光电平台。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Non-Local Detection and Electric Modulation of Valley-Coupled Spin Photocurrents in WSe2-Bi2Se3 Heterostructure Device
We perform a non-local circular photogalvanic measurement and directly generate the valley-coupled spin-polarized electrons from WSe2 to Bi2Se3 topological insulators. Our WSe2-Bi2Se3 heterostructure offers a new optoelectronic platform toward the electrically-controllable valley-spin degree of freedom.
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