HgCdTe QW异质结构中的远、中红外受激发射

V. Gavrilenko, S. Morozov, V. Rumyantsev, M. Fadeev, V. Utochkin, N. Kulikov, A. A. Dubinov, V. Aleshkin, N. Mikhailov, S. Dvoretskii, F. Teppe, C. Sirtori
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引用次数: 1

摘要

在HgCdTe量子阱(QW)异质结构中发现了24 μm(12.5太赫兹)和2.8 μm波长的受激辐射(SE)。由于相对论能谱的存在,非辐射俄歇复合被减弱。泵浦探针载流子寿命测量表明,在60 μm (5 THz)范围内,进一步增加SE波长是可行的。在短波长范围内,SE低至2.8 μm,在珀尔帖冷却器的温度下进行了演示。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Far and Mid IR Stimulated Emission in HgCdTe QW Heterostructures
Stimulated emission (SE) at wavelengths up to 24 μm (12.5 THz) and down to 2.8 μm is demonstrated from HgCdTe quantum well (QW) heterostructures. Non-radiative Auger recombination is show to be mitigated due to relativistic energy spectrum. Pump-probe carrier lifetime measurements show that further increase in SE wavelength is feasible up to 60 μm (5 THz). In the short wavelength range SE down to 2.8 μm is demonstrated at temperatures available with Peltier coolers.
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