有机-无机卤化物钙钛矿基记忆电阻器的研制

R. Abdou, Mohamed alHor, Z. Ahmed, Noora Althani
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引用次数: 0

摘要

有机-无机卤化物钙钛矿(OHP)具有带隙可调、双极性电荷输运、光学吸收系数高、载流子扩散长度延长等显著的光学特性,近十年来一直受到光电子领域研究人员的关注。基于OHP的忆阻器是一种新型的无源双端非线性信息存储器件。本文利用MAPbI3晶体制备了基于甲基铵碘化铅(MAPbI3)晶体的器件。这些晶体是用简单溶液法制备的。开发的晶体显示出高度多孔的几何形状,通过这些孔隙的陷阱电荷有助于提高导电性。该器件具有~2.7毫秒的响应恢复时间,提高了速度,并在I-V特性中表现出滞后,从而显示出优越的存储容量。因此,该器件已成为下一代非易失性存储器的潜在工具。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Development of organic–inorganic Halide Perovskites (OHPs) based Memristors
Organic – inorganic halide perovskite (OHP) has drawn researchers’ attention working in the field of optoelectronics from last ten years due to its remarkable optical properties such as adjustable band gap, ambipolar charge transport, high optical absorption coefficients, and extended carrier diffusion lengths. OHP based memristors (memory + resistors) are a newly introduced passive two-terminal, nonlinear device used for information storage. In this work we have fabricated methyl ammonium lead iodide (MAPbI3) crystals-based device from MAPbI3 crystals. The crystals have been developed by simple solution process-based method. Developed crystals have shown highly porous geometry and trap charges across these pores facilitates higher conductivity. The fabricated device exhibits ~2.7 milli second response recovery time, which enabled elevated speed and showed hysteresis in the I-V characteristics thus demonstrating superior storage capacities. Hence, the developed device has been potential tool for next-generation non-volatile memories.
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