FexZn1-x薄膜合金中Zn和Fe的K到L壳层/亚壳层空位跃迁研究

Ö. Söğüt
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引用次数: 2

摘要

摘要测量了FexZn1-x薄膜合金中k壳层向L2-、L3-和l壳层/亚壳层的空位转移概率。样品被来自50mci 241Am放射性同位素源的能量为59.5 keV的γ光子激发。发射的K x射线由分辨率为150 eV, 5.9 keV的Ultra-LEGe检测到。为了与实验结果进行比较,用辐射和非辐射跃迁速率进行了理论计算。测量结果与理论计算值在实验误差范围内吻合较好。采用硫酸盐浴法制备了FexZn1-x薄膜合金。综上所述,在不同的x组分下,FexZn1-x薄膜中的空位转移概率发生了变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Investigation of K to L shell/subshell vacancy transitions of Zn and Fe in FexZn1-x thin film alloys
Abstract The vacancy transfer probabilities from K-shell to L2-, L3- and L-shell/subshells were measured in FexZn1-x thin film alloys. The samples were excited by γ photons with energy 59.5 keV from a 50 mCi 241Am radioisotope source. The emitted K X-rays were detected by an Ultra-LEGe having a resolution of 150 eV at 5.9 keV. For comparison with experimental results, theoretical calculations have been made using radiative and nonradiative transition rates. The measured results are in good agreement with theoretically calculated values within experimental errors. FexZn1-x thin film alloys were electrochemically deposited on aluminum substrates from sulfate bath. In conclusion, it was found that the vacancy transfer probabilities changed in FexZn1-x thin films for different compositions of x.
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