ZnS的光学性质及掺杂过渡元素的影响

Maria Nisar, M. Umbreen, Sunaina Rafique, B. Liaqat, K. Batool, Iqra Shahzadi, Yasmin Zahra, Hafiza Batool
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引用次数: 4

摘要

利用密度泛函理论研究了Cu掺杂ZnS化合物的电荷密度、费米表面和电子结构。本文用(FP-LAPW)方法处理了求解kohn-sham方程的交换关系势。我们应用了广义梯度近似(GGA)、局部密度近似(LDA)和Engel-Vosko GGA (EVGGA)。Cu掺杂ZnS化合物证实了材料的金属性质,并通过Cu-p态和Znd态的重叠获得了费米能。在费米能(EF)下,计算态密度分别为51.932、18.655和13.235态/ev, GGA的低温电子比热系数分别为9.008 mj /mol-K2、3.236mJ/mol-K2和2.295mJ/mol-K2。讨论并计算了其热性能和光学常数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Optical Properties of ZnS and Effect of Doping with Transition Elements
By the help of density functional theory for a Cu doped ZnS compound the charge density,Fermi surface and electronic structure have been examined. We have used (FP-LAPW)method, to deal with interchange relationship potential for solving of kohn-sham equations.We apply generalized gradient approximation (GGA), local density approximation (LDA)and Engel-Vosko GGA (EVGGA). Cu doped ZnS compound confirms that nature ofmaterial is metallic and Fermi energy (EF) is obtained by the overlapping of Cu-p and Znd state. At Fermi energy (EF) calculated density of states is 51.932, 18.655 and 13.235 states/ev, and low-temperature electronic specific heat co-efficient (?) is found to be9.008mJ/mol-K2 for GGA, 3.236mJ/mol-K2 for LDA, and it was 2.295mJ/mol-K2 forEVGGA respectively. The thermal properties and optical constant were also discussed andcalculated.
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