硅-1薄膜在金衬底上的生长

S. Mintova , V. Valtchev , V. Engström , B.J. Schoeman , J. Sterte
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引用次数: 40

摘要

采用掠射角x射线衍射、红外光谱、动态光散射、扫描电镜、Kr吸附和椭偏仪等方法研究了在100℃下制备的改性金表面连续硅-1薄膜的结晶过程。用硅烷偶联剂γ -巯基丙基三甲氧基硅烷对金表面进行预处理,并在pH<4的酸性溶液中水解,形成一个带负电的改性界面,在该界面上吸附带正电的胶体硅石-1种子晶体。胶体种子晶体的{010}面与金表面平行,被认为优先吸附。在接下来的水热步骤中,定向种子晶体的持续生长导致连续的薄定向晶体膜的形成。讨论了在金表面形成硅石-1薄膜的机理。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Growth of silicalite-1 films on gold substrates

The crystallisation of thin continuous silicalite-1 films on modified gold surfaces prepared at 100°C in clear precursor solutions has been studied by grazing angle X-ray diffractometry, infrared spectroscopy, dynamic light scattering, scanning electron microscopy, Kr adsorption and ellipsometry. The gold surfaces were pre-treated with a silane coupling agent, gamma-mercaptopropyltrimethoxysilane, and hydrolysed in an acidic solution, pH<4, to create a modified negatively charged interface on which positively charged colloidal silicalite-1 seed crystals were adsorbed. The colloidal seed crystals are believed to be preferentially adsorbed with their {010} face parallel to the Au surface. Continued growth of the oriented seed crystals in a following hydrothermal step results in the formation of a continuous thin oriented crystalline film. The mechanism for the formation of silicalite-1 films on Au is discussed.

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