SiO蒸发薄膜形貌与向列液晶取向

M. Monkade, P. Martinot-Lagarde, G. Durand, C. Granjean
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引用次数: 14

摘要

我们展示了二氧化硅薄膜斜蒸发在氧化铟锡涂层玻璃表面的透射电子显微镜显微照片。为了研究这些SiO薄膜的生长机理,我们在蒸发平面上绘制了薄膜的横截面。随着蒸发角度的变化,我们观察到随着表面粗糙度的增加,从柱状到针状的转变。这种转变对应于平面向斜向列液晶取向的转变,通过双稳态的转变。估计SiO表面粗糙度会导致向列状表面阶数下降(表面熔化)。这些板块上的方位向列方向与最小表面熔化方向相对应。这证实了Barbero-Durand模型的预测。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
SiO Evaporated Films Topography and Nematic Liquid Crystal Orientation
We present transmission electron microscopy micrographs of SiO films obliquely evaporated on indium-tin oxide coated glass surfaces. To study the growth mechanism of these SiO films, we present film cross sections in the evaporation plane. Varying the evaporation angle, we observe a column to needle transition, with increasing surface roughness. This transition corresponds to the planar to oblique nematic liquid crystal orientation transition, through the bistable one. The SiO surface roughness is estimated to induce a nematic surface order decrease (surface melting). The azimuthal nematic orientation on these plates corresponds to the direction of minimum surface melting. This confirms the predictions of the Barbero-Durand model.
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