电光开关采用Ge2Sb2Te5相变材料中的硅MZI结构

2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR) Pub Date : 2017-07-31 DOI:10.1109/CLEOPR.2017.8118937

Hanyu Zhang, Linjie Zhou, Liangjun Lu, Z. Guo, Jian Xu, Xuecheng Fu, Jianping Chen, B. Rahman

{"title":"电光开关采用Ge2Sb2Te5相变材料中的硅MZI结构","authors":"Hanyu Zhang, Linjie Zhou, Liangjun Lu, Z. Guo, Jian Xu, Xuecheng Fu, Jianping Chen, B. Rahman","doi":"10.1109/CLEOPR.2017.8118937","DOIUrl":null,"url":null,"abstract":"We report a novel silicon MZI switch activated by the phase change of a sub-micrometer-size Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf> (GST) thin film. The phase change of GST is triggered by electrical pulses, leading to two “self-holding” switching states. Extinction ratio change of 5-dB is measured from the MZI spectrum.","PeriodicalId":6655,"journal":{"name":"2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)","volume":"21 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2017-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Electro-optical switch using Ge2Sb2Te5 phase-change material in a silicon MZI structure\",\"authors\":\"Hanyu Zhang, Linjie Zhou, Liangjun Lu, Z. Guo, Jian Xu, Xuecheng Fu, Jianping Chen, B. Rahman\",\"doi\":\"10.1109/CLEOPR.2017.8118937\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report a novel silicon MZI switch activated by the phase change of a sub-micrometer-size Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf> (GST) thin film. The phase change of GST is triggered by electrical pulses, leading to two “self-holding” switching states. Extinction ratio change of 5-dB is measured from the MZI spectrum.\",\"PeriodicalId\":6655,\"journal\":{\"name\":\"2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)\",\"volume\":\"21 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-07-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CLEOPR.2017.8118937\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CLEOPR.2017.8118937","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

我们报道了一种由亚微米尺寸的Ge2Sb2Te5 (GST)薄膜相变激活的新型硅MZI开关。GST的相变是由电脉冲触发的，导致两种“自我保持”的开关状态。在MZI谱上测量到5 db的消光比变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Electro-optical switch using Ge2Sb2Te5 phase-change material in a silicon MZI structure

We report a novel silicon MZI switch activated by the phase change of a sub-micrometer-size Ge2Sb2Te5 (GST) thin film. The phase change of GST is triggered by electrical pulses, leading to two “self-holding” switching states. Extinction ratio change of 5-dB is measured from the MZI spectrum.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)

自引率

0.00%

发文量