深紫外发光二极管非均匀展宽的影响

2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI:10.1109/NUSOD52207.2021.9541465

F. Römer, B. Witzigmann

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引用次数: 0

摘要

深紫外(DUV)发光二极管(LED)由于其尺寸小，在环境和医疗应用中具有很高的吸引力。DUV led在由氮化镓铝制成的主动量子阱(QW)中产生光。量子阱与衬底的晶格不匹配，只有很少的单层厚度，使它们容易受到通过非均匀展宽(IHB)看到的化合物波动的影响。本文通过自一致载流子输运和发光模拟分析了IHB对DUV led的电子工作和发射极化的影响。我们证明了IHB对DUV led的内部量子效率和电流电压曲线都有影响。

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Effect of Inhomogeneous Broadening in Deep Ultraviolet Light Emitting Diodes

Due to their small dimensions deep ultraviolet (DUV) light emitting diodes (LED) are highly attractive light sources for environmental and medical applications. DUV LEDs generate light in active quantum wells (QW) made of Aluminium Gallium Nitride. The QWs are not lattice matched to the substrate and only few monolayers thick making them susceptible to compound fluctuations seen through inhomogeneous broadening (IHB). In this work we analyze by means of self consistent carrier transport and luminescence simulations how the IHB affects the electronic operation and emission polarization of DUV LEDs. We demonstrate that the IHB affects both the internal quantum efficiency and the current versus voltage curve of DUV LEDs.

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2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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